In situ formation of p-n junction: A novel principle for photoelectrochemical sensor and its application for mercury(II) ion detection.
Identifieur interne : 000145 ( Main/Exploration ); précédent : 000144; suivant : 000146In situ formation of p-n junction: A novel principle for photoelectrochemical sensor and its application for mercury(II) ion detection.
Auteurs : RBID : pubmed:24832992Abstract
The discovery and development of photoelectrochemical sensors with novel principles are of great significance to realize sensitive and low-cost detection. In this paper, a new photoelectrochemial sensor based on the in situ formation of p-n junction was designed and used for the accurate determination of mercury(II) ions. Cysteine-capped ZnS quantum dots (QDs) was assembled on the surface of indium tin oxide (ITO) electrode based on the electrostatic interaction between Poly(diallyldimethylammonium chloride) (PDDA) and Cys-capped ZnS QDs. The in situ formation of HgS, a p-type semiconductor, on the surface of ZnS facilitated the charge carrier transport and promoted electron-hole separation, triggered an obviously enhanced anodic photocurrent of Cys-capped ZnS QDs. The formation of p-n junction was confirmed by P-N conductive type discriminator measurements and current-voltage (I-V) curves. The photoelectrochemical method was used for the sensing of trace mercuric (II) ions with a linear concentration of 0.01 to 10.0µM and a detection limit of 4.6×10(-9)mol/L. It is expected that the present study can serve as a foundation to the application of p-n heterojunction to photoelectrochemical sensors and it might be easily extended to more exciting sensing systems by photoelectrochemistry.
DOI: 10.1016/j.aca.2014.03.001
PubMed: 24832992
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Electronic address: glwang@jiangnan.edu.cn.</nlm:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122</wicri:regionArea></affiliation></author><author><name sortKey="Liu, Kang Li" uniqKey="Liu K">Kang-Li Liu</name><affiliation wicri:level="1"><nlm:affiliation>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, PR China.</nlm:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122</wicri:regionArea></affiliation></author><author><name sortKey="Dong, Yu Ming" uniqKey="Dong Y">Yu-Ming Dong</name><affiliation wicri:level="1"><nlm:affiliation>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, PR China.</nlm:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122</wicri:regionArea></affiliation></author><author><name sortKey="Li, Zai Jun" uniqKey="Li Z">Zai-Jun Li</name><affiliation wicri:level="1"><nlm:affiliation>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, PR China.</nlm:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122</wicri:regionArea></affiliation></author><author><name sortKey="Zhang, Chi" uniqKey="Zhang C">Chi Zhang</name><affiliation wicri:level="1"><nlm:affiliation>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, PR China.</nlm:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1016/j.aca.2014.03.001</idno><idno type="RBID">pubmed:24832992</idno><idno type="pmid">24832992</idno><idno type="wicri:Area/Main/Corpus">000000</idno><idno type="wicri:Area/Main/Curation">000000</idno><idno type="wicri:Area/Main/Exploration">000145</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The discovery and development of photoelectrochemical sensors with novel principles are of great significance to realize sensitive and low-cost detection. In this paper, a new photoelectrochemial sensor based on the in situ formation of p-n junction was designed and used for the accurate determination of mercury(II) ions. Cysteine-capped ZnS quantum dots (QDs) was assembled on the surface of indium tin oxide (ITO) electrode based on the electrostatic interaction between Poly(diallyldimethylammonium chloride) (PDDA) and Cys-capped ZnS QDs. The in situ formation of HgS, a p-type semiconductor, on the surface of ZnS facilitated the charge carrier transport and promoted electron-hole separation, triggered an obviously enhanced anodic photocurrent of Cys-capped ZnS QDs. The formation of p-n junction was confirmed by P-N conductive type discriminator measurements and current-voltage (I-V) curves. The photoelectrochemical method was used for the sensing of trace mercuric (II) ions with a linear concentration of 0.01 to 10.0µM and a detection limit of 4.6×10(-9)mol/L. It is expected that the present study can serve as a foundation to the application of p-n heterojunction to photoelectrochemical sensors and it might be easily extended to more exciting sensing systems by photoelectrochemistry.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Data-Review"><PMID Version="1">24832992</PMID><DateCreated><Year>2014</Year><Month>05</Month><Day>16</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1873-4324</ISSN><JournalIssue CitedMedium="Internet"><Volume>827</Volume><PubDate><Year>2014</Year><Month>May</Month><Day>27</Day></PubDate></JournalIssue><Title>Analytica chimica acta</Title><ISOAbbreviation>Anal. Chim. Acta</ISOAbbreviation></Journal><ArticleTitle>In situ formation of p-n junction: A novel principle for photoelectrochemical sensor and its application for mercury(II) ion detection.</ArticleTitle><Pagination><MedlinePgn>34-9</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1016/j.aca.2014.03.001</ELocationID><ELocationID EIdType="pii" ValidYN="Y">S0003-2670(14)00289-X</ELocationID><Abstract><AbstractText>The discovery and development of photoelectrochemical sensors with novel principles are of great significance to realize sensitive and low-cost detection. In this paper, a new photoelectrochemial sensor based on the in situ formation of p-n junction was designed and used for the accurate determination of mercury(II) ions. Cysteine-capped ZnS quantum dots (QDs) was assembled on the surface of indium tin oxide (ITO) electrode based on the electrostatic interaction between Poly(diallyldimethylammonium chloride) (PDDA) and Cys-capped ZnS QDs. The in situ formation of HgS, a p-type semiconductor, on the surface of ZnS facilitated the charge carrier transport and promoted electron-hole separation, triggered an obviously enhanced anodic photocurrent of Cys-capped ZnS QDs. The formation of p-n junction was confirmed by P-N conductive type discriminator measurements and current-voltage (I-V) curves. The photoelectrochemical method was used for the sensing of trace mercuric (II) ions with a linear concentration of 0.01 to 10.0µM and a detection limit of 4.6×10(-9)mol/L. It is expected that the present study can serve as a foundation to the application of p-n heterojunction to photoelectrochemical sensors and it might be easily extended to more exciting sensing systems by photoelectrochemistry.</AbstractText><CopyrightInformation>Copyright © 2014 Elsevier B.V. All rights reserved.</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Wang</LastName><ForeName>Guang-Li</ForeName><Initials>GL</Initials><Affiliation>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, PR China. Electronic address: glwang@jiangnan.edu.cn.</Affiliation></Author><Author ValidYN="Y"><LastName>Liu</LastName><ForeName>Kang-Li</ForeName><Initials>KL</Initials><Affiliation>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, PR China.</Affiliation></Author><Author ValidYN="Y"><LastName>Dong</LastName><ForeName>Yu-Ming</ForeName><Initials>YM</Initials><Affiliation>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, PR China.</Affiliation></Author><Author ValidYN="Y"><LastName>Li</LastName><ForeName>Zai-Jun</ForeName><Initials>ZJ</Initials><Affiliation>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, PR China.</Affiliation></Author><Author ValidYN="Y"><LastName>Zhang</LastName><ForeName>Chi</ForeName><Initials>C</Initials><Affiliation>The Key Laboratory of Food Colloids and Biotechnology, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, PR China.</Affiliation></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>03</Month><Day>12</Day></ArticleDate></Article><MedlineJournalInfo><Country>Netherlands</Country><MedlineTA>Anal Chim Acta</MedlineTA><NlmUniqueID>0370534</NlmUniqueID><ISSNLinking>0003-2670</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset><KeywordList Owner="NOTNLM"><Keyword MajorTopicYN="N">Mercury(II) ion</Keyword><Keyword MajorTopicYN="N">Photoelectrochemical sensor</Keyword><Keyword MajorTopicYN="N">Quantum dots</Keyword><Keyword MajorTopicYN="N">Zinc sulphide</Keyword><Keyword MajorTopicYN="N">p–n junction</Keyword></KeywordList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2013</Year><Month>12</Month><Day>16</Day></PubMedPubDate><PubMedPubDate PubStatus="revised"><Year>2014</Year><Month>2</Month><Day>26</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2014</Year><Month>3</Month><Day>3</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>3</Month><Day>12</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>5</Month><Day>17</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>5</Month><Day>17</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>5</Month><Day>17</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S0003-2670(14)00289-X</ArticleId><ArticleId IdType="doi">10.1016/j.aca.2014.03.001</ArticleId><ArticleId IdType="pubmed">24832992</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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